agilent at-32063 low current, high performance npn silicon bipolar transistor data sheet features ? high performance bipolar transistor optimized for low current, low voltage operation ? 900 mhz performance: 1.1 db nf, 14.5 db g a ? characterized for end-of- life battery use (2.7 v) ? sot-363 (sc-70) plastic package ? tape-and-reel packaging option available ? lead-free option available description the at-32063 contains two high performance npn bipolar transis- tors in a single sot-363 package. the devices are unconnected, allowing flexibility in design. the pin-out is convenient for cascode amplifier designs. the sot-363 package is an industry standard plastic surface mount package. the 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. the 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. optimized performance at 2.7 v makes this device ideal for use in 900 mhz, 1.8 ghz, and 2.4 ghz battery operated systems as an lna, gain stage, buffer, oscillator, or active mixer. typical amplifier designs at 900 mhz yield 1.3 db noise figures with 12 db or more associated gain at a 2.7 v, 5 ma bias, with noise performance being relatively insensitive to input match. high gain capability at 1 v, 1 ma makes this device a good fit for 900 mhz pager appli- cations. voltage breakdowns are high enough for use at 5 volts. surface mount package sot-363 (sc-70) pin connections and package marking b 1 1 e 1 2 c 2 3 c 1 6 e 2 5 b 2 4 the at-3 series bipolar transistors are fabricated using an optimized version of agilents 10 ghz f t , 30 ghz f max self-aligned-transistor (sat) process. the die are nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metallization in the fabrication of these devices. i i
2 at-32063 absolute maximum ratings [1] absolute symbol parameter units maximum v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 11 v ceo collector-emitter voltage v 5.5 i c collector current ma 32 p t power dissipation [2,3] mw 150 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [2] : jc = 370 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t mounting surface = 25 c. 3. derate at 2.7 mw/ c for t c > 94.5 c. 4. 150 mw per device. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. nf noise figure; v ce = 2.7 v, i c = 5 ma f = 0.9 ghz db 1.1 [2] 1.4 [2] g a associated gain; v ce = 2.7 v, i c = 5 ma f = 0.9 ghz db 12.5 [2] 14.5 [2] h fe forward current transfer ratio; v ce = 2.7 v, i c = 5 ma 50 270 i cbo collector cutoff current; v cb = 3 v a 0.2 i ebo noise figure; v eb = 1 v a 1.5 notes: 1. all data is per individual transistor. 2. test circuit, figure 1. numbers reflect device performance de-embedded from circuit losses. input loss = 0.2 db; output loss = 0.3 db. w = 20 l = 60 w = 10 l = 450 w = 10 l = 100 test circuit board material = 0.047 getek ( = 4.3) dimensions in mils not to scale 50 ? 50 ? figure 1. test circuit for noise figure and associated gain. this circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match.
3 at-32063 characterization information, t a = 25 c symbol parameters and test conditions units typ. p 1 db power at 1 db gain compression (opt tuning); v ce = 2.7 v, i c = 20 ma f = 0.9 ghz dbm 12 g 1 db gain at 1 db gain compression (opt tuning); v ce = 2.7 v, i c = 20 ma f = 0.9 ghz db 16 ip 3 output third order intercept point (opt tuning); v ce = 2.7 v, i c = 20 ma f = 0.9 ghz dbm 24 typical performance, t a = 25 c 0 0.50 1.00 2.00 1.50 0.9 1.8 2.4 noise figure (db) frequency (ghz) figure 2. minimum noise figure vs. frequency and current at v ce = 2.7 v. 2.7v/2 ma 2.7v/5 ma 2.7v/20 ma 0 5.0 10.0 20.0 15.0 0.9 1.8 2.4 ga (db) frequency (ghz) figure 3. associated gain at optimum noise match vs. frequency and current at v ce = 2.7 v. 2.7v/2 ma 2.7v/5 ma 2.7v/20 ma 10 11 12 15 13 14 0.9 1.8 2.4 p1 db (dbm) frequency (ghz) figure 4. power at 1 db gain compression vs. frequency at v ce = 2.7 v and i c = 20 ma. 0 5 10 15 25 20 0 0.5 1.0 1.5 2.0 2.5 ip 3 (dbm) frequency (ghz) figure 6. third order intercept vs. frequency and bias at v ce = 2.7 v, with optimal tuning. 2 ma 5 ma 10 ma 20 ma 0 3 6 18 15 9 12 0.9 1.8 2.4 g1 db (dbm) frequency (ghz) figure 5. 1 db compressed gain vs. frequency at v ce = 2.7 v and i c =20ma.
4 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 1 v, i c = 1 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 0.71 10.4 0.76 50 0.44 1.8 1.37 8.3 0.60 112 0.24 2.4 1.80 7.2 0.50 155 0.10 -5 0 s21 5 10 15 25 20 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 7. gain vs. frequency at v ce = 1 v, i c = 1 ma. msg msg mag 0 5 s21 10 15 20 30 25 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 8. gain vs. frequency at v ce = 2.7 v, i c = 2 ma. msg msg mag at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 2.7 v, i c = 2 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.96 -12 16.46 6.66 169 -37.32 0.014 82 0.98 -5 0.5 0.77 -55 14.73 5.45 132 -25.13 0.055 59 0.87 -21 0.9 0.59 -87 12.37 4.15 107 -22.42 0.076 48 0.76 -29 1.0 0.55 -93 11.74 3.86 103 -22.07 0.079 47 0.74 -30 1.5 0.42 -121 9.26 2.90 83 -20.79 0.091 44 0.69 -36 1.8 0.37 -135 8.01 2.52 73 -20.13 0.099 45 0.67 -39 2.0 0.34 -145 7.35 2.33 67 -19.67 0.104 46 0.66 -41 2.4 0.29 -164 6.05 2.01 56 -18.68 0.116 48 0.65 -46 3.0 0.26 167 4.54 1.69 41 -16.95 0.142 50 0.64 -53 4.0 0.28 124 2.73 1.37 20 -13.75 0.205 48 0.61 -68 5.0 0.33 94 1.36 1.17 1 -10.70 0.292 41 0.57 -89 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 2.7 v, i c = 2 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 0.78 14.3 0.65 50 0.31 1.8 1.25 10.7 0.45 105 0.20 2.4 1.57 9.1 0.35 145 0.13 at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 1 v, i c = 1 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.98 -11 11.36 3.7 171 -34.77 0.02 83 0.99 -4 0.5 0.86 -50 10.14 3.21 138 -22.02 0.08 59 0.91 -20 0.9 0.72 -82 8.39 2.63 113 -18.97 0.11 43 0.82 -31 1.0 0.69 -88 7.87 2.48 108 -18.61 0.12 41 0.8 -32 1.5 0.58 -119 5.87 1.97 85 -17.8 0.13 31 0.73 -41 1.8 0.52 -134 4.83 1.74 74 -17.72 0.13 28 0.7 -45 2.0 0.49 -145 4.3 1.64 67 -17.69 0.13 28 0.68 -48 2.4 0.45 -165 3.16 1.44 55 -17.68 0.13 30 0.67 -54 3.0 0.41 166 1.84 1.24 39 -16.99 0.14 37 0.64 -63 4.0 0.42 124 0.17 1.02 16 -13.67 0.21 45 0.6 -81 5.0 0.47 93 -1.15 0.88 -2 -9.84 0.32 38 0.54 -107
5 at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 2.7 v, i c = 5 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.87 -19 23.36 14.72 162 -37.77 0.013 80 0.96 -9 0.5 0.52 -72 19.21 9.13 116 -27.03 0.045 60 0.72 -25 0.9 0.34 -101 15.40 5.89 94 -24.01 0.063 58 0.62 -28 1.0 0.31 -106 14.60 5.37 90 -23.41 0.067 58 0.61 -29 1.5 0.22 -129 11.54 3.77 74 -20.85 0.091 58 0.58 -33 1.8 0.19 -141 10.12 3.21 66 -19.52 0.106 58 0.57 -36 2.0 0.17 -150 9.33 2.93 61 -18.72 0.116 57 0.57 -38 2.4 0.14 -169 7.95 2.50 52 -17.22 0.138 56 0.57 -42 3.0 0.12 160 6.34 2.08 39 -15.25 0.173 52 0.56 -49 4.0 0.16 117 4.46 1.67 20 -12.40 0.240 44 0.53 -63 5.0 0.22 93 3.15 1.44 2 -10.03 0.315 33 0.48 -82 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 2.7 v, i c = 5 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 0.98 16.4 0.45 51 0.23 1.8 1.50 11.6 0.29 100 0.16 2.4 1.77 10.1 0.33 153 0.11 at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 2.7 v, i c = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.55 -41 30.48 33.40 143 -39.81 0.010 74 0.83 -15 0.5 0.20 -107 21.24 11.53 97 -29.18 0.035 72 0.56 -20 0.9 0.13 -137 16.48 6.66 82 -24.63 0.059 72 0.53 -22 1.0 0.13 -141 15.60 6.02 79 -23.79 0.065 71 0.53 -22 1.5 0.10 -164 12.26 4.10 67 -20.43 0.095 68 0.52 -27 1.8 0.09 -178 10.78 3.46 60 -18.88 0.114 66 0.53 -31 2.0 0.09 172 9.93 3.14 56 -17.98 0.126 64 0.53 -34 2.4 0.08 152 8.52 2.67 48 -16.39 0.151 60 0.53 -39 3.0 0.10 127 6.85 2.20 36 -14.4 0.191 54 0.52 -47 4.0 0.15 101 4.92 1.76 18 -11.68 0.261 43 0.48 -61 5.0 0.21 86 3.59 1.51 0 -9.52 0.334 31 0.44 -79 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 2.7 v, i c = 20 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 1.51 17.9 0.13 88 0.20 1.8 1.78 12.7 0.20 178 0.13 2.4 1.96 10.6 0.28 235 0.08 0 5 s21 10 15 20 25 30 35 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 9. gain vs. frequency at v ce = 2.7 v, i c = 5 ma. msg msg mag 0 5 s21 10 15 20 40 25 30 35 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 10. gain vs. frequency at v ce = 2.7 v, i c = 20 ma. msg msg mag
6 at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 5 v, i c = 2 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.96 -12 16.50 6.69 169 -38.44 0.012 82 0.98 -5 0.5 0.78 -53 14.84 5.52 133 -26.20 0.049 60 0.88 -19 0.9 0.59 -84 12.5 4.23 108 -23.4 0.068 50 0.79 -27 1.0 0.56 -90 11.92 3.94 104 -23.04 0.070 49 0.77 -28 1.5 0.42 -117 9.46 2.97 84 -21.71 0.082 46 0.72 -33 1.8 0.36 -131 8.21 2.57 74 -21.04 0.089 47 0.70 -36 2.0 0.33 -140 7.55 2.38 68 -20.56 0.094 48 0.69 -39 2.4 0.28 -159 6.24 2.05 57 -19.54 0.105 50 0.69 -43 3.0 0.24 171 4.72 1.72 43 -17.76 0.129 53 0.68 -50 4.0 0.25 126 2.88 1.39 21 -14.47 0.189 52 0.66 -64 5.0 0.31 95 1.49 1.19 3 -11.32 0.272 45 0.63 -83 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 5 v, i c = 2 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 0.75 13.7 0.74 47 0.37 1.8 1.26 10.8 0.55 101 0.22 2.4 1.60 9.6 0.45 139 0.13 0 5 s21 10 15 20 30 25 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 11. gain vs. frequency at v ce = 5 v, i c = 2 ma. msg msg mag at-32063 typical scattering parameters, common emitter, z o = 50 ? , v ce = 5 v, i c = 20 ma freq. s 11 s 21 s 12 s 22 ghz mag ang db mag ang db mag ang mag ang 0.1 0.61 -36 30.56 33.74 145 -40.46 0.01 75 0.86 -14 0.5 0.22 -91 21.75 12.23 98 -29.90 0.03 72 0.6 -19 0.9 0.13 -115 17.02 7.10 83 -25.40 0.05 72 0.57 -21 1.0 0.12 -118 16.14 6.41 81 -24.56 0.06 71 0.57 -21 1.5 0.08 -137 12.80 4.36 68 -21.23 0.09 69 0.57 -26 1.8 0.06 -148 11.31 3.68 62 -19.69 0.10 66 0.57 -30 2.0 0.06 -159 10.46 3.33 58 -18.79 0.12 65 0.57 -32 2.4 0.04 175 9.02 2.83 50 -17.21 0.14 61 0.57 -37 3.0 0.05 131 7.35 2.33 39 -15.22 0.17 56 0.56 -45 4.0 0.10 99 5.39 1.86 21 -12.48 0.24 46 0.54 -58 5.0 0.16 86 4.05 1.6 3 -10.27 0.31 34 0.50 -75 at-32063 typical noise parameters common emitter, z o = 50 ? , v ce = 5 v, i c = 20 ma freq. f min g a g opt r n ghz db db mag. ang. 0.9 1.50 18.6 0.18 74 0.20 1.8 1.78 13.3 0.19 147 0.16 2.4 1.96 11.3 0.24 198 0.14 0 5 s21 10 15 20 40 25 30 35 0.1 1.1 2.1 3.1 4.1 5.1 gain (db) frequency (ghz) figure 12. gain vs. frequency at v ce = 5 v, i c = 20 ma. msg msg mag
7 package dimensions outline 63 (sot-363/sc-70) ordering information part numbers no. of devices comments at-32063-blk 100 bulk at-32063-blkg 100 bulk at-32063-tr1 3000 7" reel at-32063-tr1g 3000 7" reel AT-32063-TR2 10000 13" reel AT-32063-TR2g 10000 13" reel note: order part number with a g suffix if lead-free option is desired. e he d e a1 b a a2 q1 l c dimensions (mm) min. 1.15 1.80 1.80 0.80 0.80 0.00 0.10 0.15 0.10 0.10 max. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.30 0.20 0.30 symbol e d he a a2 a1 q1 e b c l 0.650 bcs
device orientation tape dimensions for outline 63 user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view ii ii ii ii p p 0 p 2 f w d 1 d e a 0 8 max. t 1 (carrier tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (65) 6756 2394 india, australia, new zealand: (65) 6755 1939 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (65) 6755 2044 taiwan: (65) 6755 1843 data subject to change. copyright ? 2005 agilent technologies, inc. obsoletes 5965-8921e march 28, 2005 5989-2645en
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